PMN120ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN120ENEA
Marking Code: J5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 24 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.123 Ohm
Package: TSOP6
PMN120ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN120ENEA Datasheet (PDF)
pmn120enea.pdf
PMN120ENEA60 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
pmn120ene.pdf
PMN120ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disc
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
