All MOSFET. PMN30XPE Datasheet

 

PMN30XPE Datasheet and Replacement


   Type Designator: PMN30XPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TSOP6
 

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PMN30XPE Datasheet (PDF)

 ..1. Size:255K  nxp
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PMN30XPE

PMN30XPE20 V, P-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HB

 7.1. Size:731K  nxp
 pmn30xp.pdf pdf_icon

PMN30XPE

PMN30XP20 V, P-channel Trench MOSFET23 February 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1400 m

 9.1. Size:726K  nxp
 pmn30une.pdf pdf_icon

PMN30XPE

PMN30UNE20 V, N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa

 9.2. Size:258K  nxp
 pmn30enea.pdf pdf_icon

PMN30XPE

PMN30ENEA40 V N-channel Trench MOSFET2 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

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Datasheet: PMN25ENE , PMN25ENEA , PMN280ENEA , PMN28UNE , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , 8N60 , PMN40ENA , PMN40ENE , PMN48XPA , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE .

History: TPCA8105 | SI2347DS | SWP056R68E7T | SWP035R10E6S | IRFH4234 | SUM09N20-270 | NCEAP60ND30AG

Keywords - PMN30XPE MOSFET datasheet

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