PMN40ENE Specs and Replacement
Type Designator: PMN40ENE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.7 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TSOP6
PMN40ENE substitution
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PMN40ENE datasheet
pmn40ene.pdf
PMN40ENE 30 V, N-channel Trench MOSFET 24 May 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipatio... See More ⇒
pmn40ena.pdf
PMN40ENA 60 V, N-channel Trench MOSFET 11 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE... See More ⇒
pmn40upe.pdf
PMN40UPE 20 V, single P-channel Trench MOSFET 13 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Fast switching Trench MOSFET technology ... See More ⇒
Detailed specifications: PMN280ENEA, PMN28UNE, PMN30ENEA, PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, K2611, PMN48XPA, PMN50EPE, PMN52XP, PMN55ENE, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE
Keywords - PMN40ENE MOSFET specs
PMN40ENE cross reference
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