PMN50EPE Specs and Replacement

Type Designator: PMN50EPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 134 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TSOP6

PMN50EPE substitution

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PMN50EPE datasheet

 ..1. Size:260K  nxp
pmn50epe.pdf pdf_icon

PMN50EPE

PMN50EPE 30 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg... See More ⇒

 9.1. Size:225K  nxp
pmn50upe.pdf pdf_icon

PMN50EPE

PMN50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage 1... See More ⇒

 9.2. Size:127K  nxp
pmn50xp.pdf pdf_icon

PMN50EPE

PMN50XP P-channel TrenchMOS extremely low level FET Rev. 02 2 October 2007 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features Low on-state... See More ⇒

 9.3. Size:834K  cn vbsemi
pmn50xp.pdf pdf_icon

PMN50EPE

PMN50XP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha... See More ⇒

Detailed specifications: PMN30ENEA, PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE, PMN48XPA, RU7088R, PMN52XP, PMN55ENE, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, PMPB10EN

Keywords - PMN50EPE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.