PMPB29XPEA Datasheet. Specs and Replacement

Type Designator: PMPB29XPEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0325 Ohm

Package: SOT1220

  📄📄 Copy 

PMPB29XPEA substitution

- MOSFET ⓘ Cross-Reference Search

 

PMPB29XPEA datasheet

 ..1. Size:278K  nxp
pmpb29xpea.pdf pdf_icon

PMPB29XPEA

PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 5.1. Size:233K  nxp
pmpb29xpe.pdf pdf_icon

PMPB29XPEA

PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra... See More ⇒

 7.1. Size:288K  nxp
pmpb29xnea.pdf pdf_icon

PMPB29XPEA

PMPB29XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank... See More ⇒

 7.2. Size:258K  nxp
pmpb29xne.pdf pdf_icon

PMPB29XPEA

PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack... See More ⇒

Detailed specifications: PMPB16EP, PMPB20XNEA, PMPB20XPEA, PMPB23XNEA, PMPB24EP, PMPB25ENE, PMPB27EPA, PMPB29XNEA, IRFB4227, PMPB30XPE, PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, PMPB8XN, PMT200EPE

Keywords - PMPB29XPEA MOSFET specs

 PMPB29XPEA cross reference

 PMPB29XPEA equivalent finder

 PMPB29XPEA pdf lookup

 PMPB29XPEA substitution

 PMPB29XPEA replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs