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PMPB29XPEA Spec and Replacement


   Type Designator: PMPB29XPEA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0325 Ohm
   Package: SOT1220

 PMPB29XPEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMPB29XPEA Specs

 ..1. Size:278K  nxp
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PMPB29XPEA

PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 5.1. Size:233K  nxp
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PMPB29XPEA

PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra... See More ⇒

 7.1. Size:288K  nxp
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PMPB29XPEA

PMPB29XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank... See More ⇒

 7.2. Size:258K  nxp
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PMPB29XPEA

PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack... See More ⇒

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Detailed specifications: PMPB16EP , PMPB20XNEA , PMPB20XPEA , PMPB23XNEA , PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA , IRFB4227 , PMPB30XPE , PMPB43XPEA , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE .

History: DHS025N88E

Keywords - PMPB29XPEA MOSFET specs

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