PMPB55XNEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB55XNEA
Marking Code: 3Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
|Id|ⓘ - Maximum Drain Current: 3.8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 3 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 31 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SOT1220
PMPB55XNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB55XNEA Datasheet (PDF)
pmpb55xnea.pdf
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