PMV19XNEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV19XNEA
Marking Code: R3*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12.4 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT23
PMV19XNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV19XNEA Datasheet (PDF)
..1. Size:290K nxp
pmv19xnea.pdf
pmv19xnea.pdf
PMV19XNEA30 V, N-channel Trench MOSFET6 September 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology
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