PMV280ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV280ENEA
Marking Code: EL*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 1.1 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: SOT23
PMV280ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV280ENEA Datasheet (PDF)
pmv280enea.pdf
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