PMV280ENEA Datasheet. Specs and Replacement

Type Designator: PMV280ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm

Package: SOT23

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PMV280ENEA datasheet

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PMV280ENEA

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PMV280ENEA

PMV28UNEA 20 V, N-channel Trench MOSFET 10 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discha... See More ⇒

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PMV280ENEA

PMV28ENEA 30 V, N-channel Trench MOSFET 9 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒

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PMV280ENEA

Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET te... See More ⇒

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Detailed specifications: PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, IRFP260, PMV28ENEA, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE

Keywords - PMV280ENEA MOSFET specs

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