PMV48XPA2 Spec and Replacement
Type Designator: PMV48XPA2
Marking Code: *HG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 7 nC
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: SOT23
PMV48XPA2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV48XPA2 Specs
pmv48xpa2.pdf
PMV48XPA2 20 V, P-channel Trench MOSFET 28 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology V... See More ⇒
pmv48xpa.pdf
PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified ... See More ⇒
pmv48xp.pdf
PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec... See More ⇒
pmv48xp.pdf
Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switch... See More ⇒
Detailed specifications: PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , IRFB3607 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL .
History: JMSH1504NE
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History: JMSH1504NE
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