PMV48XPA2 Datasheet. Specs and Replacement

Type Designator: PMV48XPA2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: SOT23

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PMV48XPA2 datasheet

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PMV48XPA2

PMV48XPA2 20 V, P-channel Trench MOSFET 28 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology V... See More ⇒

 6.1. Size:249K  nxp
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PMV48XPA2

PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified ... See More ⇒

 7.1. Size:750K  nxp
pmv48xp.pdf pdf_icon

PMV48XPA2

PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec... See More ⇒

 7.2. Size:262K  tysemi
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PMV48XPA2

Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switch... See More ⇒

Detailed specifications: PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, PMV450ENEA, IRFB3607, PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, PMV88ENEA, PMV90ENE, PMZ600UNEL

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