PMV74EPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV74EPE
Marking Code: 2P*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.7 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23
PMV74EPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV74EPE Datasheet (PDF)
pmv74epe.pdf
PMV74EPE30 V, P-channel Trench MOSFET20 August 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha
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