All MOSFET. PMV74EPE Datasheet

 

PMV74EPE Datasheet and Replacement


   Type Designator: PMV74EPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT23
 

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PMV74EPE Datasheet (PDF)

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PMV74EPE

PMV74EPE30 V, P-channel Trench MOSFET20 August 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha

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History: 2SK1813 | AP6679GJ-HF

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