All MOSFET. STP55N05LFI Datasheet

 

STP55N05LFI Datasheet and Replacement


   Type Designator: STP55N05LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 950 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: ISOWATT220
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STP55N05LFI Datasheet (PDF)

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STP55N05LFI

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 stp55n06l stp55n06lfi.pdf pdf_icon

STP55N05LFI

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 stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf pdf_icon

STP55N05LFI

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V

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STP55N05LFI

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V

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History: BL6N70A-P | APT10021JFLL | SSW65R190S2 | SM4186T9RL | NCE30P12BS | WMM07N65C4 | NP180N04TUJ

Keywords - STP55N05LFI MOSFET datasheet

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