All MOSFET. PSMN018-100ESF Datasheet

 

PSMN018-100ESF Datasheet and Replacement


   Type Designator: PSMN018-100ESF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 111 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14.1 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: I2PAK
 

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PSMN018-100ESF Datasheet (PDF)

 ..1. Size:250K  nxp
 psmn018-100esf.pdf pdf_icon

PSMN018-100ESF

PSMN018-100ESFNextPower 100 V, 18 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 3.1. Size:259K  nxp
 psmn018-100psf.pdf pdf_icon

PSMN018-100ESF

PSMN018-100PSFNextPower 100 V, 18 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 6.1. Size:225K  philips
 psmn018-80ys.pdf pdf_icon

PSMN018-100ESF

PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 6.2. Size:825K  nxp
 psmn018-80ys.pdf pdf_icon

PSMN018-100ESF

PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

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Datasheet: PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , 7N60 , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , PSMN1R0-40SSH .

History: AP2605GY-HF

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