PSMN0R9-25YLD Datasheet. Specs and Replacement

Type Designator: PSMN0R9-25YLD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 2390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm

Package: SOT669

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PSMN0R9-25YLD datasheet

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PSMN0R9-25YLD

PSMN0R9-25YLD N-channel 25 V, 0.85 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w... See More ⇒

 2.1. Size:300K  philips
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PSMN0R9-25YLD

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits... See More ⇒

 2.2. Size:911K  nxp
psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-25YLD

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits... See More ⇒

 6.1. Size:263K  nxp
psmn0r9-30uld.pdf pdf_icon

PSMN0R9-25YLD

PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util... See More ⇒

Detailed specifications: PSMN013-60YL, PSMN014-80YL, PSMN015-100YL, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, STF13NM60N, PSMN0R9-30ULD, PSMN1R0-25YLD, PSMN1R0-40SSH, PSMN1R0-40ULD, PSMN1R0-40YSH, PSMN1R2-25YLD, PSMN1R5-25MLH, PSMN1R5-40YSD

Keywords - PSMN0R9-25YLD MOSFET specs

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