PSMN0R9-25YLD Spec and Replacement
Type Designator: PSMN0R9-25YLD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 238 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 2390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
Package: SOT669
PSMN0R9-25YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN0R9-25YLD Specs
psmn0r9-25yld.pdf
PSMN0R9-25YLD N-channel 25 V, 0.85 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w... See More ⇒
psmn0r9-25ylc.pdf
PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits... See More ⇒
psmn0r9-25ylc.pdf
PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits... See More ⇒
psmn0r9-30uld.pdf
PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util... See More ⇒
Detailed specifications: PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL , STF13NM60N , PSMN0R9-30ULD , PSMN1R0-25YLD , PSMN1R0-40SSH , PSMN1R0-40ULD , PSMN1R0-40YSH , PSMN1R2-25YLD , PSMN1R5-25MLH , PSMN1R5-40YSD .
History: FDMQ8403
Keywords - PSMN0R9-25YLD MOSFET specs
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