PSMN1R0-25YLD Datasheet. Specs and Replacement

Type Designator: PSMN1R0-25YLD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 1979 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: SOT669

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PSMN1R0-25YLD datasheet

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PSMN1R0-25YLD

PSMN1R0-25YLD N-channel 25 V, 1.0 m , 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi... See More ⇒

 6.1. Size:253K  philips
psmn1r0-30ylc.pdf pdf_icon

PSMN1R0-25YLD

PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK Rev. 03 17 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Powe... See More ⇒

 6.2. Size:322K  nxp
psmn1r0-40ssh.pdf pdf_icon

PSMN1R0-25YLD

PSMN1R0-40SSH N-channel 40 V, 1 m , 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and low ... See More ⇒

 6.3. Size:234K  nxp
psmn1r0-30yld.pdf pdf_icon

PSMN1R0-25YLD

PSMN1R0-30YLD N-channel 30 V, 1.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE... See More ⇒

Detailed specifications: PSMN015-100YL, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, AO3407, PSMN1R0-40SSH, PSMN1R0-40ULD, PSMN1R0-40YSH, PSMN1R2-25YLD, PSMN1R5-25MLH, PSMN1R5-40YSD, PSMN1R6-30MLH, PSMN1R7-25YLD

Keywords - PSMN1R0-25YLD MOSFET specs

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