PSMN1R0-25YLD
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN1R0-25YLD
Marking Code: 1D025L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 160
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 71.8
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 1979
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001
Ohm
Package:
SOT669
PSMN1R0-25YLD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN1R0-25YLD
Datasheet (PDF)
..1. Size:730K nxp
psmn1r0-25yld.pdf 
PSMN1R0-25YLDN-channel 25 V, 1.0 m, 240 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi
6.1. Size:253K philips
psmn1r0-30ylc.pdf
PSMN1R0-30YLCN-channel 30 V 1.15 m logic level MOSFET in LFPAKRev. 03 17 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Powe
6.2. Size:322K nxp
psmn1r0-40ssh.pdf
PSMN1R0-40SSHN-channel 40 V, 1 m, 325 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology1 May 2019 Product data sheet1. General description325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and low
6.3. Size:234K nxp
psmn1r0-30yld.pdf
PSMN1R0-30YLDN-channel 30 V, 1.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology19 September 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
6.4. Size:288K nxp
psmn1r0-40yld.pdf
PSMN1R0-40YLDN-channel 40 V 1.1 m logic level MOSFET in LFPAK56 usingNextPower-S3 Schottky-Plus technology25 August 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has beendesigned and qualified for high performance power switching appli
6.5. Size:748K nxp
psmn1r0-30ylc.pdf
PSMN1R0-30YLCN-channel 30 V 1.15 m logic level MOSFET in LFPAK usingNextPower technology15 January 2015 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High reliability Power SO8
6.6. Size:264K nxp
psmn1r0-40uld.pdf
PSMN1R0-40ULDN-channel 40 V, 1.1 m, 280 A logic level MOSFET inSOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logiclevel gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package usingadvanced Tre
6.7. Size:295K nxp
psmn1r0-40ysh.pdf
PSMN1R0-40YSHN-channel 40 V, 1 m, 290 A standard level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology25 April 2019 Product data sheet1. General description290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance
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