PSMN1R0-40YSH MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN1R0-40YSH
Marking Code: 1H0S40J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 290 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 87 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1767 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: SOT1023
PSMN1R0-40YSH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN1R0-40YSH Datasheet (PDF)
psmn1r0-40ysh.pdf
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