All MOSFET. PSMN1R5-40YSD Datasheet

 

PSMN1R5-40YSD MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN1R5-40YSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 238 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1421 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: SOT669

 PSMN1R5-40YSD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN1R5-40YSD Datasheet (PDF)

 ..1. Size:299K  nxp
psmn1r5-40ysd.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

PSMN1R5-40YSDN-channel 40 V, 1.5 m, 240 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 4.1. Size:235K  philips
psmn1r5-40ps.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO220.Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High e

 4.2. Size:227K  philips
psmn1r5-40es.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 4.3. Size:743K  nxp
psmn1r5-40ps.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO22015 July 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.Product design and manufacture has been optimized for use in battery operated powertools.2. Features and benefits High efficiency due to low switching and conduction losses Robus

 4.4. Size:816K  nxp
psmn1r5-40es.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 4.5. Size:261K  inchange semiconductor
psmn1r5-40ps.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

isc N-Channel MOSFET Transistor PSMN1R5-40PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.6. Size:255K  inchange semiconductor
psmn1r5-40es.pdf

PSMN1R5-40YSD
PSMN1R5-40YSD

isc N-Channel MOSFET Transistor PSMN1R5-40ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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