PSMN3R3-40MLH MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN3R3-40MLH
Marking Code: 3H3L40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
|Id|ⓘ - Maximum Drain Current: 118 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 627 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: SOT1210
PSMN3R3-40MLH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN3R3-40MLH Datasheet (PDF)
psmn3r3-40mlh.pdf
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psmn3r3-40msh.pdf
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psmn3r3-40ys.pdf
PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn3r3-40ys.pdf
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