PSMN3R5-25MLD Datasheet and Replacement

PSMN3R5-25MLDN-channel 25 V, 3.72 m logic level MOSFET in LFPAK33using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

PSMN3R5-30LLN-channel QFN3333 30 V 3.6 m logic level MOSFETRev. 3 18 August 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency

PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAK3 August 2018 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic packageusing TrenchMOS technology. This product is designed and qualified for use in industrial andcommunications applications.2. Features and benefits High efficiency due to low

PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

PSMN3R5-40YSDN-channel 40 V, 3.5 m, 120 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology2 October 2018 Product data sheet1. General description120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

isc N-Channel MOSFET Transistor PSMN3R5-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor PSMN3R5-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general