All MOSFET. PSMN3R5-25MLD Datasheet

 

PSMN3R5-25MLD MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN3R5-25MLD
   Marking Code: 3D525L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18.9 nC
   trⓘ - Rise Time: 12.9 nS
   Cossⓘ - Output Capacitance: 863 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00372 Ohm
   Package: SOT1210

 PSMN3R5-25MLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN3R5-25MLD Datasheet (PDF)

 ..1. Size:728K  nxp
psmn3r5-25mld.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-25MLDN-channel 25 V, 3.72 m logic level MOSFET in LFPAK33using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

 6.1. Size:238K  philips
psmn3r5-30yl.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 6.2. Size:229K  philips
psmn3r5-80es.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 6.3. Size:404K  philips
psmn3r5-30ll.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-30LLN-channel QFN3333 30 V 3.6 m logic level MOSFETRev. 3 18 August 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency

 6.4. Size:235K  philips
psmn3r5-80ps.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 6.5. Size:329K  nxp
psmn3r5-30yl.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAK3 August 2018 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic packageusing TrenchMOS technology. This product is designed and qualified for use in industrial andcommunications applications.2. Features and benefits High efficiency due to low

 6.6. Size:818K  nxp
psmn3r5-80es.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 6.7. Size:283K  nxp
psmn3r5-40ysd.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-40YSDN-channel 40 V, 3.5 m, 120 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology2 October 2018 Product data sheet1. General description120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 6.8. Size:819K  nxp
psmn3r5-80ps.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 6.9. Size:254K  inchange semiconductor
psmn3r5-80es.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

isc N-Channel MOSFET Transistor PSMN3R5-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.10. Size:261K  inchange semiconductor
psmn3r5-80ps.pdf

PSMN3R5-25MLD
PSMN3R5-25MLD

isc N-Channel MOSFET Transistor PSMN3R5-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BRF60R580C

 

 
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