PSMN6R9-100YSF Specs and Replacement

Type Designator: PSMN6R9-100YSF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2 nS

Cossⓘ - Output Capacitance: 722 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: SOT669

PSMN6R9-100YSF substitution

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PSMN6R9-100YSF datasheet

 ..1. Size:281K  nxp
psmn6r9-100ysf.pdf pdf_icon

PSMN6R9-100YSF

PSMN6R9-100YSF NextPower 100 V, 7 m N-channel MOSFET in LFPAK56 package 8 December 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for... See More ⇒

 8.1. Size:383K  philips
psmn6r0-30yl.pdf pdf_icon

PSMN6R9-100YSF

PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit... See More ⇒

 8.2. Size:222K  philips
psmn6r5-80ps.pdf pdf_icon

PSMN6R9-100YSF

PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien... See More ⇒

 8.3. Size:324K  nxp
psmn6r0-30yld.pdf pdf_icon

PSMN6R9-100YSF

PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒

Detailed specifications: PSMN5R3-25MLD, PSMN5R4-25YLD, PSMN5R6-60YL, PSMN6R0-25YLD, PSMN6R4-30MLD, PSMN6R5-30MLD, PSMN6R7-40MLD, PSMN6R7-40MSD, IRFZ44, PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF, PSMN8R5-100PSF, PSMN8R5-40MSD, PSMN8R7-100YSF, PSMNR60-25YLH, PSMNR70-30YLH

Keywords - PSMN6R9-100YSF MOSFET specs

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