PSMN6R9-100YSF Datasheet and Replacement

PSMN6R9-100YSFNextPower 100 V, 7 m N-channel MOSFET in LFPAK56package8 December 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

PSMN6R1-30YLDN-channel 30 V, 6.1 m logic level MOSFET in LFPAK56using NextPowerS3 Technology19 September 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE

PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

PSMN6R3-120ESN-channel 120 V 6.7 m standard level MOSFET in I2PAK8 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low switching

PSMN6R5-25YLCN-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

PSMN6R4-30MLDN-channel 30 V, 6.4 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as

PSMN6R5-30MLDN-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as

PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

PSMN6R7-40MLDN-channel 40 V, 6.7 m, logic level MOSFET in LFPAK33using NextPower-S3 technology14 August 2019 Product data sheet1. General description50 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications operating at high switchin

PSMN6R7-40MSDN-channel 40 V, 6.7 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description50 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN6R3-120PSN-channel 120 V 6.7 m standard level MOSFET in TO-2207 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low switchi