PSMNR90-40YLH
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMNR90-40YLH
Marking Code: H90L40J
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05
V
|Id|ⓘ - Maximum Drain Current: 300
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 120
nC
trⓘ - Rise Time: 46
nS
Cossⓘ -
Output Capacitance: 1702
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00094
Ohm
Package: SOT1023
PSMNR90-40YLH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMNR90-40YLH
Datasheet (PDF)
..1. Size:288K nxp
psmnr90-40ylh.pdf
PSMNR90-40YLHN-channel 40 V, 0.94 m, 300 A logic level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology26 April 2019 Product data sheet1. General description300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance po
4.1. Size:320K nxp
psmnr90-40ssh.pdf
PSMNR90-40SSHN-channel 40 V, 0.9 m, 375 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology19 June 2019 Product data sheet1. General description375 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and
6.1. Size:231K nxp
psmnr90-30bl.pdf
PSMNR90-30BLN-channel 30 V 1.0 m logic level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
9.1. Size:319K nxp
psmnr70-40ssh.pdf
PSMNR70-40SSHN-channel 40 V, 0.7 m, 425 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology19 June 2019 Product data sheet1. General description425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and
9.2. Size:303K nxp
psmnr60-25ylh.pdf
PSMNR60-25YLHN-channel 25 V, 0.7 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimizedfor low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A,optimized for DC load switch and hot-swap a
9.3. Size:306K nxp
psmnr70-30ylh.pdf
PSMNR70-30YLHN-channel 30 V, 0.82 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 technology12 November 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimizedfor low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A,optimized for DC load switch and hot-swap ap
Datasheet: AM3401
, AM3402N
, AM3403P
, AM3405P
, AM3406
, AM3406N
, AM3407
, AM3407PE
, SKD502T
, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
.