All MOSFET. FDWS86368-F085 Datasheet

 

FDWS86368-F085 Datasheet and Replacement


   Type Designator: FDWS86368-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 636 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN8-5.1X6.3
 

 FDWS86368-F085 substitution

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FDWS86368-F085 Datasheet (PDF)

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FDWS86368-F085

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FDWS86368-F085

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FDWS86368-F085

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FDWS86368-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Datasheet: FDS86267P , FDS8949-F085 , FDS8958A-F085 , FDS8984-F085 , FDU3N50NZTU , FDU5N50NZTU , FDU5N60NZTU , FDWS86068-F085 , 20N50 , FDWS86369-F085 , FDWS86380-F085 , FDWS9508L-F085 , FDWS9509L-F085 , FDWS9510L-F085 , FDWS9520L-F085 , FQA10N80C-F109 , FQA11N90-F109 .

History: AP9962AGP | CEA6426 | R6010MNX | 2SK1565 | IPP80N04S2-04 | STP20NF06L | VB1106K

Keywords - FDWS86368-F085 MOSFET datasheet

 FDWS86368-F085 cross reference
 FDWS86368-F085 equivalent finder
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