All MOSFET. FDWS86369-F085 Datasheet

 

FDWS86369-F085 Datasheet and Replacement


   Type Designator: FDWS86369-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: POWER56
 

 FDWS86369-F085 substitution

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FDWS86369-F085 Datasheet (PDF)

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FDWS86369-F085

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FDWS86369-F085

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FDWS86369-F085

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FDWS86369-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Datasheet: FDS8949-F085 , FDS8958A-F085 , FDS8984-F085 , FDU3N50NZTU , FDU5N50NZTU , FDU5N60NZTU , FDWS86068-F085 , FDWS86368-F085 , IRF1407 , FDWS86380-F085 , FDWS9508L-F085 , FDWS9509L-F085 , FDWS9510L-F085 , FDWS9520L-F085 , FQA10N80C-F109 , FQA11N90-F109 , FQA13N50C-F109 .

History: HM40N10 | SD215DE | 2SK1569 | APT5018BFLL | WVM9.5N100 | BUZ339 | HCF70R600

Keywords - FDWS86369-F085 MOSFET datasheet

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