FDWS86380-F085
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDWS86380-F085
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0134
Ohm
Package:
POWER56
FDWS86380-F085
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDWS86380-F085
Datasheet (PDF)
..1. Size:623K 1
fdws86380-f085.pdf
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..2. Size:623K onsemi
fdws86380-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
7.1. Size:1272K 1
fdws86369-f085.pdf
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7.2. Size:510K 1
fdws86368-f085.pdf
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7.3. Size:1272K onsemi
fdws86369-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
7.4. Size:510K onsemi
fdws86368-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
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