FDWS9509L-F085 Datasheet and Replacement
Type Designator: FDWS9509L-F085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: POWER56
FDWS9509L-F085 substitution
FDWS9509L-F085 Datasheet (PDF)
fdws9509l-f085.pdf

www.onsemi.comFDWS9509L-F085 (Note1)P-Channel Logic Level Power Trench MOSFET- 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI)Applications Automotive Engi
fdws9508l-f085.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdws9508l-f085.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fdws9520l-f085.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Datasheet: FDU3N50NZTU , FDU5N50NZTU , FDU5N60NZTU , FDWS86068-F085 , FDWS86368-F085 , FDWS86369-F085 , FDWS86380-F085 , FDWS9508L-F085 , 18N50 , FDWS9510L-F085 , FDWS9520L-F085 , FQA10N80C-F109 , FQA11N90-F109 , FQA13N50C-F109 , FQA13N80-F109 , FQA6N90C-F109 , FQA7N80C-F109 .
History: R6004CND | IRFS3207PBF | STT3471P | SKI04024 | CEB7030L | IRFPG40 | FQP7P20
Keywords - FDWS9509L-F085 MOSFET datasheet
FDWS9509L-F085 cross reference
FDWS9509L-F085 equivalent finder
FDWS9509L-F085 lookup
FDWS9509L-F085 substitution
FDWS9509L-F085 replacement
History: R6004CND | IRFS3207PBF | STT3471P | SKI04024 | CEB7030L | IRFPG40 | FQP7P20



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