FQA90N15-F109 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA90N15-F109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 220 nC
trⓘ - Rise Time: 760 nS
Cossⓘ - Output Capacitance: 1400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-3PN
FQA90N15-F109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA90N15-F109 Datasheet (PDF)
fqa90n15-f109.pdf
FQA90N15-F109 N-Channel QFET MOSFETDescription150 V, 90 A, 18 mThese N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 AThis advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC)minimize on-
fqa90n15 fqh90n15.pdf
October 2006 QFETFQH90N15 / FQA90N15 N-Channel Power MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge (typical 220 nC)stripe, DMOS technology. Low Crss (typical 200 pF)This advanced technology has been especiall
fqa90n15 f109.pdf
November 2007 QFETFQA90N15_F109150V N-Channel MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 200pF)This advanced technology has been especially tailore
fqa90n15.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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