FQD4P25TM-WS Specs and Replacement

Type Designator: FQD4P25TM-WS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: DPAK

FQD4P25TM-WS substitution

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FQD4P25TM-WS datasheet

 ..1. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TM-WS

FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, Description ID = -1.55 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor s Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET t... See More ⇒

 5.1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TM-WS

November 2013 FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC) technology has been especi... See More ⇒

 7.1. Size:591K  fairchild semi
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FQD4P25TM-WS

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn... See More ⇒

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TM-WS

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn... See More ⇒

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Detailed specifications: FQA8N90C-F109, FQA90N15-F109, FQA9N90_F109, FQA9N90C_F109, FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C, FQD3N60CTM-WS, 8N60, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, NID9N05BCL, NTB004N10G, NTB095N65S3HF

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