All MOSFET. FQD4P25TM-WS Datasheet

 

FQD4P25TM-WS Datasheet and Replacement


   Type Designator: FQD4P25TM-WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: DPAK
 

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FQD4P25TM-WS Datasheet (PDF)

 ..1. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TM-WS

FQD4P25TM-WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,DescriptionID = -1.55 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC)produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF)proprietary planar stripe and DMOS technology. This advanced MOSFET t

 5.1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TM-WS

November 2013FQD4P25TM_WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = -1.55 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC)technology has been especi

 7.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P25TM-WS

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TM-WS

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

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Datasheet: FQA8N90C-F109 , FQA90N15-F109 , FQA9N90_F109 , FQA9N90C_F109 , FQB5N60CTM_WS , FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , 8N60 , FQD8P10TM-F085 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 , NCV8403B , NID9N05BCL , NTB004N10G , NTB095N65S3HF .

History: MTN6680Q8 | SMP3003

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