NCV8403B Datasheet and Replacement
Type Designator: NCV8403B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 42
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 14
V
|Id| ⓘ - Maximum Drain Current: 8
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
ton ⓘ - Turn-on Time: 44000
nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068
Ohm
Package:
SOT223
-
MOSFET ⓘ Cross-Reference Search
NCV8403B Datasheet (PDF)
..1. Size:111K onsemi
ncv8403a ncv8403b.pdf 
NCV8403A, NCV8403BSelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223www.onsemi.comNCV8403A/B is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.
7.1. Size:135K onsemi
ncv8403a.pdf 
NCV8403, NCV8403ASelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403/A is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection
7.2. Size:163K onsemi
ncv8403.pdf 
NCV8403Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403 is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.This devi
8.1. Size:122K onsemi
ncv8401.pdf 
NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(
8.2. Size:152K onsemi
ncv8402.pdf 
NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe
8.3. Size:92K onsemi
ncv8402a ncv8402astt1g.pdf 
NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm
8.4. Size:140K onsemi
ncv8406.pdf 
NCV8406Self-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This device offers
8.5. Size:98K onsemi
ncv8408.pdf 
NCV8408Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 10 A, Single N-Channel, DPAKhttp://onsemi.comNCV8408 is a single channel protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.Thermal prot
8.6. Size:137K onsemi
ncv8406a.pdf 
NCV8406, NCV8406ASelf-Protected Low SideDriver with Temperatureand Current Limit65 V, 7.0 A, Single N-Channelhttp://onsemi.comNCV8406/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,VDSS ID TYPESD and integrated Drain-to-Gate clamping for overvoltage protection.(Clamped) RDS(on) TYP (Limited)This d
8.7. Size:123K onsemi
ncv8401a ncv8401adtrkg ncv8401dtrkg.pdf 
NCV8401, NCV8401ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8401/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(C
8.8. Size:118K onsemi
ncv8402ad.pdf 
NCV8402D, NCV8402ADDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D/AD is a dual protected Low-Side Smart Discrete device.The protection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suita
8.9. Size:147K onsemi
ncv8402d.pdf 
NCV8402DDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D is a dual protected Low-Side Smart Discrete device. Theprotection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suitable for harsh
8.10. Size:136K onsemi
ncv8405a.pdf 
NCV8405, NCV8405ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8405/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device is suitable for harsh automotive environments.V(BR)DSSRDS(ON) TYP
8.11. Size:136K onsemi
ncv8405.pdf 
NCV8405Self-Protected Low SideDriver with Temperatureand Current LimitNCV8405 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device is suitable for harsh automotive environments.V(BR)DSSRDS(ON) TYPID MAX(Cla
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History: DH019N04I
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