All MOSFET. NCV8403B Datasheet

 

NCV8403B Datasheet and Replacement


   Type Designator: NCV8403B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 42 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 44000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOT223
 

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NCV8403B Datasheet (PDF)

 ..1. Size:111K  onsemi
ncv8403a ncv8403b.pdf pdf_icon

NCV8403B

NCV8403A, NCV8403BSelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223www.onsemi.comNCV8403A/B is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.

 7.1. Size:135K  onsemi
ncv8403a.pdf pdf_icon

NCV8403B

NCV8403, NCV8403ASelf-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403/A is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection

 7.2. Size:163K  onsemi
ncv8403.pdf pdf_icon

NCV8403B

NCV8403Self-Protected Low SideDriver with Temperatureand Current Limit42 V, 14 A, Single N-Channel, SOT-223http://onsemi.comNCV8403 is a three terminal protected Low-Side Smart DiscreteVDSS ID MAXdevice. The protection features include overcurrent, overtemperature,RDS(on) TYP(Clamped) (Limited)ESD and integrated Drain-to-Gate clamping for overvoltage protection.This devi

 8.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8403B

NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(

Datasheet: FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , FQD4P25TM-WS , FQD8P10TM-F085 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 , IRFZ48N , NID9N05BCL , NTB004N10G , NTB095N65S3HF , NTB110N65S3HF , NTB150N65S3HF , NTB190N65S3HF , NTBG020N120SC1 , NTBG040N120SC1 .

History: DH019N04I | APM2324A

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