NTBG020N120SC1 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTBG020N120SC1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 468 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
|Id|ⓘ - Maximum Drain Current: 98 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 220 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 258 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: D2PAK-7L
NTBG020N120SC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTBG020N120SC1 Datasheet (PDF)
ntbg020n120sc1.pdf
MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhmNTBG020N120SC1Features Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) 100% Avalanche TestedV(BR)DSS RDS(ON) MAX ID MAX TJ = 175C1200 V 28 mW @ 20 V 98 A RoHS CompliantTypical Applic
ntbg040n120sc1.pdf
MOSFET SiC Power, SingleN-Channel, D2PAK-7L1200 V, 40 mW, 60 ANTBG040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) Low Effective Output Capacitance (Typ. Coss = 139 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested TJ = 175C 1200 V 56 mW @ 20 V 60 A This Device is Pb-Free and is RoHS Compliant
ntbg060n090sc1.pdf
MOSFET - SiC Power, SingleN-Channel, D2PAK-7L900 V, 60 mW, 44 ANTBG060N090SC1Features Typ. RDS(on) = 60 mW @ VGS = 15 Vwww.onsemi.com Typ. RDS(on) = 43 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 88 nC) High Speed Switching with Low Capacitance (Coss = 115 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested900 V 84 mW @ 15 V 44 A TJ = 175C
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