STP5N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP5N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 85 nS
Drain-Source Capacitance (Cd): 165 pF
Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm
Package: TO220
STP5N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP5N90 Datasheet (PDF)
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