All MOSFET. STP5NA50 Datasheet

 

STP5NA50 Datasheet and Replacement


   Type Designator: STP5NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220
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STP5NA50 Datasheet (PDF)

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STP5NA50

STP5NA50STP5NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA50 500 V

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 stp5na80.pdf pdf_icon

STP5NA50

STP5NA80STP5NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA80 800 V

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STP5NA50

STP5NA60STP5NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA60 600 V

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STP5NA50

STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V

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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

Keywords - STP5NA50 MOSFET datasheet

 STP5NA50 cross reference
 STP5NA50 equivalent finder
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