NTMFS020N06C Datasheet and Replacement
Type Designator: NTMFS020N06C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 1.4
nS
Cossⓘ -
Output Capacitance: 260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0196
Ohm
Package:
SO-8FL
- MOSFET Cross-Reference Search
NTMFS020N06C Datasheet (PDF)
..1. Size:178K onsemi
ntmfs020n06c.pdf 
MOSFET- Power, SingleN-Channel, SO8FL60 V, 19.6 mW, 28 ANTMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant60 V 19.6 mW @ 10 V 28 AApplications
7.1. Size:138K onsemi
ntmfs024n06c.pdf 
MOSFET- Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANTMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant60 V 22 mW @ 10 V 25 AApplications
8.1. Size:187K 1
ntmfs0d8n02p1et1g.pdf 
MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
8.2. Size:176K 1
ntmfs0d9n03cgt1g.pdf 
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
8.3. Size:185K 1
ntmfs006n12mct1g.pdf 
MOSFET - Power, SingleN-Channel120 V, 6.0 mW, 93 ANTMFS006N12MCFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Soft Body Diode Reduces Voltage Ringing6.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are
8.4. Size:200K 1
ntmfs008n12mct1g.pdf 
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
8.5. Size:213K 1
ntmfs015n10mclt1g.pdf 
MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 54 ANTMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET12.2 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC100 V 54 A18.3 mW @ 4.5 V
8.6. Size:137K onsemi
ntmfs016n06c.pdf 
MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANTMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant60 V 15.6 mW @ 10 V 33 AApplications
8.7. Size:213K onsemi
ntmfs015n10mcl.pdf 
MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 54 ANTMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET12.2 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC100 V 54 A18.3 mW @ 4.5 V
8.8. Size:187K onsemi
ntmfs0d8n02p1e.pdf 
MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
8.9. Size:169K onsemi
ntmfs0d55n03cg.pdf 
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.58 mW, 462 ANTMFS0D55N03CGFeatures Wide SOA to Improve Inrush Current Managementwww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System EfficiencyV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant30 V 0.58 mW @ 1
8.10. Size:1406K onsemi
ntmfs08n003c.pdf 
www.onsemi.comNTMFS08N003CN-Channel Shielded Gate PowerTrench MOSFET 80 V, 147 A, 3.1 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MV MOSFET is produced using ONSemiconductors advanced PowerTrench process that Max rDS(on) = 3.1 m at VGS = 10 V, ID = 56 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 8.1 m
8.11. Size:176K onsemi
ntmfs0d9n03cg.pdf 
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
Datasheet: IRFP360LC
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History: BUK7237-55A
| AON6794
| BUZ84
| CED05N8
| VS3522AE
| IRLR024
| BL10N70-A
Keywords - NTMFS020N06C MOSFET datasheet
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NTMFS020N06C replacement