NTMFS024N06C
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS024N06C
Marking Code: 24N06C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 5.7
nC
trⓘ - Rise Time: 1.3
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SO-8FL
NTMFS024N06C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS024N06C
Datasheet (PDF)
..1. Size:138K onsemi
ntmfs024n06c.pdf
MOSFET- Power, SingleN-Channel, SO-8 FL60 V, 22 mW, 25 ANTMFS024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant60 V 22 mW @ 10 V 25 AApplications
7.1. Size:178K onsemi
ntmfs020n06c.pdf
MOSFET- Power, SingleN-Channel, SO8FL60 V, 19.6 mW, 28 ANTMFS020N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant60 V 19.6 mW @ 10 V 28 AApplications
8.1. Size:187K 1
ntmfs0d8n02p1et1g.pdf
MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
8.2. Size:176K 1
ntmfs0d9n03cgt1g.pdf
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
8.3. Size:185K 1
ntmfs006n12mct1g.pdf
MOSFET - Power, SingleN-Channel120 V, 6.0 mW, 93 ANTMFS006N12MCFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Soft Body Diode Reduces Voltage Ringing6.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are
8.4. Size:200K 1
ntmfs008n12mct1g.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
8.5. Size:213K 1
ntmfs015n10mclt1g.pdf
MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 54 ANTMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET12.2 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC100 V 54 A18.3 mW @ 4.5 V
8.6. Size:137K onsemi
ntmfs016n06c.pdf
MOSFET- Power, SingleN-Channel, SO-8FL60 V, 15.6 mW, 33 ANTMFS016N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant60 V 15.6 mW @ 10 V 33 AApplications
8.7. Size:213K onsemi
ntmfs015n10mcl.pdf
MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 54 ANTMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET12.2 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC100 V 54 A18.3 mW @ 4.5 V
8.8. Size:187K onsemi
ntmfs0d8n02p1e.pdf
MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic
8.9. Size:169K onsemi
ntmfs0d55n03cg.pdf
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.58 mW, 462 ANTMFS0D55N03CGFeatures Wide SOA to Improve Inrush Current Managementwww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System EfficiencyV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant30 V 0.58 mW @ 1
8.10. Size:1406K onsemi
ntmfs08n003c.pdf
www.onsemi.comNTMFS08N003CN-Channel Shielded Gate PowerTrench MOSFET 80 V, 147 A, 3.1 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MV MOSFET is produced using ONSemiconductors advanced PowerTrench process that Max rDS(on) = 3.1 m at VGS = 10 V, ID = 56 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 8.1 m
8.11. Size:176K onsemi
ntmfs0d9n03cg.pdf
MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.