All MOSFET. NTMFS4C025N Datasheet

 

NTMFS4C025N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS4C025N
   Marking Code: 4C025
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.6 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 841 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00341 Ohm
   Package: SO-8FL

 NTMFS4C025N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4C025N Datasheet (PDF)

 ..1. Size:139K  onsemi
 ntmfs4c025n.pdf

NTMFS4C025N NTMFS4C025N

NTMFS4C025NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V30 V 69 ACompliant4.88 mW @ 4.5 V

 5.1. Size:173K  onsemi
 ntmfs4c022n.pdf

NTMFS4C025N NTMFS4C025N

MOSFET Power, Single,N-Channel, SO-8FL30 V, 1.7 mW, 136 ANTMFS4C022NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.7 mW @ 10 V30 VCompliant136 A2.4 mW

 5.2. Size:177K  onsemi
 ntmfs4c029n.pdf

NTMFS4C025N NTMFS4C025N

NTMFS4C029NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 46 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.88 mW @ 10 VCompliant30 V 46 A9.0 mW @ 4.5 V

 5.3. Size:175K  onsemi
 ntmfs4c020n.pdf

NTMFS4C025N NTMFS4C025N

MOSFET Power, Single,N-Channel, Logic Level,SO-8FL30 V, 0.67 mW, 370 ANTMFS4C020Nwww.onsemi.comFeatures Small Footprint (5x6 mm) for Compact DesignV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses30 V0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices

 5.4. Size:178K  onsemi
 ntmfs4c027n.pdf

NTMFS4C025N NTMFS4C025N

NTMFS4C027NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant4.8 mW @ 10 V30 V 52 AApplications7.4

 5.5. Size:182K  onsemi
 ntmfs4c028n.pdf

NTMFS4C025N NTMFS4C025N

NTMFS4C028NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.73 mW @ 10 V30 V 52 ACompliant7.0 mW @ 4.5 V

 5.6. Size:173K  onsemi
 ntmfs4c024n.pdf

NTMFS4C025N NTMFS4C025N

NTMFS4C024NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 78 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.8 mW @ 10 V30 V 78 ACompliant4.0 mW @ 4.5 V

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