NTMFS4C028N Specs and Replacement

Type Designator: NTMFS4C028N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00473 Ohm

Package: SO-8FL

NTMFS4C028N substitution

- MOSFET ⓘ Cross-Reference Search

 

NTMFS4C028N datasheet

 ..1. Size:182K  onsemi
ntmfs4c028n.pdf pdf_icon

NTMFS4C028N

NTMFS4C028N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.73 mW @ 10 V 30 V 52 A Compliant 7.0 mW @ 4.5 V ... See More ⇒

 5.1. Size:173K  onsemi
ntmfs4c022n.pdf pdf_icon

NTMFS4C028N

MOSFET Power, Single, N-Channel, SO-8FL 30 V, 1.7 mW, 136 A NTMFS4C022N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.7 mW @ 10 V 30 V Compliant 136 A 2.4 mW... See More ⇒

 5.2. Size:177K  onsemi
ntmfs4c029n.pdf pdf_icon

NTMFS4C028N

NTMFS4C029N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.88 mW @ 10 V Compliant 30 V 46 A 9.0 mW @ 4.5 V ... See More ⇒

 5.3. Size:175K  onsemi
ntmfs4c020n.pdf pdf_icon

NTMFS4C028N

MOSFET Power, Single, N-Channel, Logic Level, SO-8FL 30 V, 0.67 mW, 370 A NTMFS4C020N www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses 0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses 30 V 0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices ... See More ⇒

Detailed specifications: NTMFS4899NF, NTMFS4927NC, NTMFS4936NC, NTMFS4C020N, NTMFS4C022N, NTMFS4C024N, NTMFS4C025N, NTMFS4C027N, 75N75, NTMFS4C029N, NTMFS4C032N, NTMFS4C054N, NTMFS4C250N, NTMFS4C290N, NTMFS4C302N, NTMFS4C59N, NTMFS4H013NF

Keywords - NTMFS4C028N MOSFET specs

 NTMFS4C028N cross reference

 NTMFS4C028N equivalent finder

 NTMFS4C028N pdf lookup

 NTMFS4C028N substitution

 NTMFS4C028N replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs