NTMFS4C029N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS4C029N
Marking Code: 4C029
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 23.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 46
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.7
nC
trⓘ - Rise Time: 34
nS
Cossⓘ -
Output Capacitance: 574
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00588
Ohm
Package:
SO-8FL
NTMFS4C029N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS4C029N
Datasheet (PDF)
..1. Size:177K onsemi
ntmfs4c029n.pdf 
NTMFS4C029NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 46 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.88 mW @ 10 VCompliant30 V 46 A9.0 mW @ 4.5 V
5.1. Size:173K onsemi
ntmfs4c022n.pdf
MOSFET Power, Single,N-Channel, SO-8FL30 V, 1.7 mW, 136 ANTMFS4C022NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.7 mW @ 10 V30 VCompliant136 A2.4 mW
5.2. Size:175K onsemi
ntmfs4c020n.pdf
MOSFET Power, Single,N-Channel, Logic Level,SO-8FL30 V, 0.67 mW, 370 ANTMFS4C020Nwww.onsemi.comFeatures Small Footprint (5x6 mm) for Compact DesignV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses30 V0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices
5.3. Size:139K onsemi
ntmfs4c025n.pdf
NTMFS4C025NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V30 V 69 ACompliant4.88 mW @ 4.5 V
5.4. Size:178K onsemi
ntmfs4c027n.pdf
NTMFS4C027NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant4.8 mW @ 10 V30 V 52 AApplications7.4
5.5. Size:182K onsemi
ntmfs4c028n.pdf
NTMFS4C028NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.73 mW @ 10 V30 V 52 ACompliant7.0 mW @ 4.5 V
5.6. Size:173K onsemi
ntmfs4c024n.pdf
NTMFS4C024NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 78 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.8 mW @ 10 V30 V 78 ACompliant4.0 mW @ 4.5 V
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
