NTMFS5C406N MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTMFS5C406N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 353 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 116 nS
   Cossⓘ - Output Capacitance: 4530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: DFN5

NTMFS5C406N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTMFS5C406N Datasheet (PDF)

..1. Size:121K onsemi
ntmfs5c406n.pdf

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

0.1. Size:159K 1
ntmfs5c406nlt1g.pdf

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

0.2. Size:121K 1
ntmfs5c406nt1g.pdf