NTMFS5C456NL MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTMFS5C456NL
   Marking Code: 5C456L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 87 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 28.8 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: DFN5

NTMFS5C456NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NTMFS5C456NL Datasheet (PDF)

..1. Size:175K onsemi
ntmfs5c456nl.pdf

MOSFET Power, Single,N-Channel40 V, 3.7 mW, 87 ANTMFS5C456NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.7 mW @ 10 V40 V87 AMAXIMUM RATINGS (TJ = 25C unless other

0.1. Size:175K 1
ntmfs5c456nlt3g.pdf

5.1. Size:122K 1
ntmfs5c450nlt3g.pdf

NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

5.2. Size:169K 1
ntmfs5c450nt3g.pdf

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

5.3. Size:122K onsemi
ntmfs5c450nl.pdf