NTMFS6H800NL Specs and Replacement

Type Designator: NTMFS6H800NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 224 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 153 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: DFN5

NTMFS6H800NL substitution

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NTMFS6H800NL datasheet

 ..1. Size:194K  onsemi
 ntmfs6h800nl.pdf pdf_icon

NTMFS6H800NL

NTMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol V... See More ⇒

 3.1. Size:179K  onsemi
 ntmfs6h800n.pdf pdf_icon

NTMFS6H800NL

NTMFS6H800N MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 2.1 mW @ 10 V 203 A MAXIMUM RATINGS (TJ = 25 C unless other... See More ⇒

 5.1. Size:98K  1
 ntmfs6h801nt1g.pdf pdf_icon

NTMFS6H800NL

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V ... See More ⇒

 5.2. Size:98K  onsemi
 ntmfs6h801n.pdf pdf_icon

NTMFS6H800NL

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V ... See More ⇒

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Detailed specifications: NTMFS5H425NL, NTMFS5H431NL, NTMFS5H600NL, NTMFS5H610NL, NTMFS5H615NL, NTMFS5H630NL, NTMFS6D1N08H, NTMFS6H800N, 2N7000, NTMFS6H801N, NTMFS6H801NL, NTMFS6H818N, NTMFS6H818NL, NTMFS6H836N, NTMFS6H836NL, NTMFS6H848NL, NTMFS6H852NL

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