NTMFS6H818NL Specs and Replacement
Type Designator: NTMFS6H818NL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 135 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 106 nS
Cossⓘ -
Output Capacitance: 484 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: DFN5
NTMFS6H818NL substitution
- MOSFET ⓘ Cross-Reference Search
NTMFS6H818NL datasheet
..1. Size:176K onsemi
ntmfs6h818nl.pdf 
MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒
0.1. Size:176K 1
ntmfs6h818nlt1g.pdf
MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒
3.1. Size:177K onsemi
ntmfs6h818n.pdf
NTMFS6H818N MOSFET Power, Single, N-Channel 80 V, 3.7 mW, 123 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 3.7 mW @ 10 V 123 A MAXIMUM RATINGS (TJ = 25 C unless other... See More ⇒
6.1. Size:175K 1
ntmfs6h848nlt1g.pdf
MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 8.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80... See More ⇒
6.2. Size:177K 1
ntmfs6h852nlt1g.pdf
MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NTMFS6H852NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 13.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒
6.3. Size:98K 1
ntmfs6h801nt1g.pdf
NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V ... See More ⇒
6.4. Size:173K 1
ntmfs6h836nlt1g.pdf
MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.2 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒
6.5. Size:98K onsemi
ntmfs6h801n.pdf
NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V ... See More ⇒
6.6. Size:173K onsemi
ntmfs6h836nl.pdf
MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.2 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒
6.7. Size:178K onsemi
ntmfs6h836n.pdf
MOSFET - Power, Single N-Channel 80 V, 6.7 mW, 80 A NTMFS6H836N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 80 V 6.7 mW @ 10 V 80 A MAXIMUM RATINGS (TJ = 25 C unless otherwise ... See More ⇒
6.8. Size:177K onsemi
ntmfs6h864nl.pdf
MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NTMFS6H864NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 29 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 ... See More ⇒
6.9. Size:194K onsemi
ntmfs6h800nl.pdf
NTMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol V... See More ⇒
6.10. Size:179K onsemi
ntmfs6h800n.pdf
NTMFS6H800N MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 2.1 mW @ 10 V 203 A MAXIMUM RATINGS (TJ = 25 C unless other... See More ⇒
6.11. Size:174K onsemi
ntmfs6h801nl.pdf
MOSFET - Power, Single N-Channel 80 V, 2.7 mW, 160 A NTMFS6H801NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒
6.12. Size:175K onsemi
ntmfs6h848nl.pdf
MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 8.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80... See More ⇒
6.13. Size:177K onsemi
ntmfs6h852nl.pdf
MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NTMFS6H852NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 13.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒
Detailed specifications: NTMFS5H615NL, NTMFS5H630NL, NTMFS6D1N08H, NTMFS6H800N, NTMFS6H800NL, NTMFS6H801N, NTMFS6H801NL, NTMFS6H818N, IRFP250N, NTMFS6H836N, NTMFS6H836NL, NTMFS6H848NL, NTMFS6H852NL, NTMFS6H864NL, NTMFSC0D9N04CL, NTMTS001N06CL, NTMTS0D6N04C
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