STP60N06 Datasheet and Replacement
Type Designator: STP60N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
STP60N06 substitution
STP60N06 Datasheet (PDF)
stp60n05 stp60n06.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n05-14 stp60n06-14.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n05-16 stp60n06-16.pdf
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Datasheet: STP5NA50FI , STP5NA60 , STP5NA60FI , STP5NA80 , STP5NA80FI , STP60N05 , STP60N05-16 , STP60N05FI , TK10A60D , STP60N06-16 , STP60N06FI , STP6N25 , STP6N25FI , STP6N50 , STP6N50FI , STP6N60FI , STP6NA50 .
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