STP60N06 Datasheet and Replacement
Type Designator: STP60N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 68 nC
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
STP60N06 substitution
STP60N06 Datasheet (PDF)
stp60n05 stp60n06.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n05-14 stp60n06-14.pdf
STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V
stp60n05-16 stp60n06-16.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Keywords - STP60N06 MOSFET datasheet
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History: BFL4007
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