NTP095N65S3HF MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP095N65S3HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 61 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO220
NTP095N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP095N65S3HF Datasheet (PDF)
..1. Size:593K onsemi
ntp095n65s3hf.pdf
ntp095n65s3hf.pdf
NTP095N65S3HFMOSFET Power,NChannel, SUPERFET III,FRFETwww.onsemi.com650 V, 36 A, 95 mWDescriptionVDSS RDS(ON) MAX ID MAXSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 95 mW @ 10 V 36 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advance
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