All MOSFET. NTP5862N Datasheet

 

NTP5862N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTP5862N
   Marking Code: 5862N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 82 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: DPAK IPAK TO220

 NTP5862N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP5862N Datasheet (PDF)

 ..1. Size:137K  onsemi
 ntd5862n ntp5862n.pdf

NTP5862N NTP5862N

NTD5862N, NTP5862NMOSFET Power,N-Channel60 V, 98 A, 5.7 mWFeatureswww.onsemi.com Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX High Current Capability60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS CompliantDMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelParameter Symbol Value UnitGDrain-t

 8.1. Size:101K  onsemi
 ntp5864ng.pdf

NTP5862N NTP5862N

NTP5864NPower MOSFET60 V, 63 A, 12.4 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy SpecifiedID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX (Note 1)Compliant60 V 12.4 m @ 10 V 63 AMAXIMUM RATINGS (TJ = 25C unless otherwise stated)N-ChannelParameter Symbol Value UnitsDDra

 8.2. Size:113K  onsemi
 ntb5860n ntp5860n nvb5860n.pdf

NTP5862N NTP5862N

NTB5860N, NTP5860N,NVB5860NN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change

 8.3. Size:100K  onsemi
 ntp5863ng.pdf

NTP5862N NTP5862N

NTP5863NN-Channel Power MOSFET60 V, 97 A, 7.8 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX60 V 7.8 mW @ 10 V 97 AMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)Parameter Symbol Value UnitDDrain-to-Source Voltage VDSS 6

 8.4. Size:73K  onsemi
 ntp5864n.pdf

NTP5862N NTP5862N

NTP5864NPower MOSFET60 V, 63 A, 12.4 mWFeatures Low RDS(on) High Current Capabilitywww.onsemi.com Avalanche Energy SpecifiedID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX (Note 1)Compliant60 V 12.4 m @ 10 V 63 AMAXIMUM RATINGS (TJ = 25C unless otherwise stated)N-ChannelParameter Symbol Value UnitsDDrain-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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