NTP5862N MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP5862N
Marking Code: 5862N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 98 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 82 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: DPAK IPAK TO220
NTP5862N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP5862N Datasheet (PDF)
ntd5862n ntp5862n.pdf
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NTD5862N, NTP5862NMOSFET Power,N-Channel60 V, 98 A, 5.7 mWFeatureswww.onsemi.com Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX High Current Capability60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS CompliantDMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelParameter Symbol Value UnitGDrain-t
ntp5864ng.pdf
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NTP5864NPower MOSFET60 V, 63 A, 12.4 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy SpecifiedID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX (Note 1)Compliant60 V 12.4 m @ 10 V 63 AMAXIMUM RATINGS (TJ = 25C unless otherwise stated)N-ChannelParameter Symbol Value UnitsDDra
ntb5860n ntp5860n nvb5860n.pdf
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NTB5860N, NTP5860N,NVB5860NN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change
ntp5863ng.pdf
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NTP5863NN-Channel Power MOSFET60 V, 97 A, 7.8 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX60 V 7.8 mW @ 10 V 97 AMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)Parameter Symbol Value UnitDDrain-to-Source Voltage VDSS 6
ntp5864n.pdf
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NTP5864NPower MOSFET60 V, 63 A, 12.4 mWFeatures Low RDS(on) High Current Capabilitywww.onsemi.com Avalanche Energy SpecifiedID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX (Note 1)Compliant60 V 12.4 m @ 10 V 63 AMAXIMUM RATINGS (TJ = 25C unless otherwise stated)N-ChannelParameter Symbol Value UnitsDDrain-
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .