All MOSFET. NTTFS015P03P8Z Datasheet

 

NTTFS015P03P8Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTTFS015P03P8Z
   Marking Code: 15P3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 33.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 47.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 138 nS
   Cossⓘ - Output Capacitance: 907 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: WDFN8

 NTTFS015P03P8Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTTFS015P03P8Z Datasheet (PDF)

 ..1. Size:201K  onsemi
nttfs015p03p8z.pdf

NTTFS015P03P8Z
NTTFS015P03P8Z

NTTFS015P03P8ZMOSFET Power, Single,P-Channel, m8FL-30 V, 7.5 mW Featureswww.onsemi.com Ultra Low RDS(on) to Improve System Efficiency Advanced Package Technology in 3.3x3.3mm for Space Saving andExcellent Thermal ConductionV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 mW @ -10 VCompliant-30 V -47.6 A12 mW @ -4.5 V

 6.1. Size:199K  onsemi
nttfs015n04c.pdf

NTTFS015P03P8Z
NTTFS015P03P8Z

NTTFS015N04CMOSFET Power, Single,N-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX40 V 17.3 mW @ 10 V 27 AMAXIMUM RATINGS (TJ = 25C unless otherw

 7.1. Size:139K  onsemi
nttfs016n06c.pdf

NTTFS015P03P8Z
NTTFS015P03P8Z

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANTTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 16.3 mW @ 10 V 32 ATypica

 7.2. Size:387K  onsemi
nttfs010n10mcl.pdf

NTTFS015P03P8Z
NTTFS015P03P8Z

NTTFS010N10MCLMOSFET, N-Channel,Shielded Gate,POWERTRENCH)100 V, 50 A, 10.6 mWwww.onsemi.comGeneral DescriptionThis N-Channel POWETRENCH MOSFET is produced usingELECTRICAL CONNECTIONON Semiconductors advanced POWERTRENCH process thatincorporates Shielded Gate technology. This process has beenSDoptimized to minimize on-state resistance and yet maintain superior

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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