NTTFS5C453NL
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTTFS5C453NL
Marking Code: 453L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 107
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package:
WDFN8
NTTFS5C453NL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTTFS5C453NL
Datasheet (PDF)
..1. Size:144K onsemi
nttfs5c453nl.pdf 
NTTFS5C453NLPower MOSFET40 V, 3 mW, 107 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unle
5.1. Size:76K 1
nttfs5c454nltag.pdf
NTTFS5C454NLPower MOSFET40 V, 3.8 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C
5.2. Size:76K onsemi
nttfs5c454nl.pdf
NTTFS5C454NLPower MOSFET40 V, 3.8 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX3.8 mW @ 10 VMAXIMUM RATINGS (TJ = 25C
6.1. Size:199K onsemi
nttfs5c478nl.pdf
MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANTTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX14 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40
6.2. Size:269K onsemi
nttfs5c471nl.pdf
MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANTTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V40 V 41 A15.5 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25
6.3. Size:118K onsemi
nttfs5c466nl.pdf
MOSFET Power, Single,N-Channel40 V, 7.3 mW, 51 ANTTFS5C466NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant7.3 mW @ 10 V40 V 51 AMAXIMUM RATINGS (TJ = 25C unless otherw
6.4. Size:200K onsemi
nttfs5c460nl.pdf
NTTFS5C460NLMOSFET Power, Single,N-Channel40 V, 4.8 mW, 74 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.8 mW @ 10 V40 V 74 AMAXIMUM RATINGS (TJ = 25C unless otherw
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