NTTFS6H860NL Datasheet and Replacement

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANTTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant20 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V

NTTFS6H850NMOSFET Power, Single,N-Channel80 V, 9.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX80 V 9.5 mW @ 10 V 68 AMAXIMUM RATINGS (TJ = 25C unless otherwise

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant29 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANTTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)13.4 mW @ 10 V

NTTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)8.6 mW @ 10 VParam