All MOSFET. NTTFS6H860NL Datasheet

 

NTTFS6H860NL MOSFET. Datasheet pdf. Equivalent

Type Designator: NTTFS6H860NL

Marking Code: 860L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 32 nS

Drain-Source Capacitance (Cd): 83 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: WDFN8

NTTFS6H860NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTTFS6H860NL Datasheet (PDF)

0.1. nttfs6h860nl.pdf Size:197K _onsemi

NTTFS6H860NL
NTTFS6H860NL

MOSFET - Power, SingleN-Channel80 V, 20 mW, 30 ANTTFS6H860NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant20 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V

6.1. nttfs6h850nl.pdf Size:185K _onsemi

NTTFS6H860NL
NTTFS6H860NL

NTTFS6H850NLPower MOSFET80 V, 8.6 mW, 64 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)8.6 mW @ 10 VParam

6.2. nttfs6h854nl.pdf Size:201K _onsemi

NTTFS6H860NL
NTTFS6H860NL

MOSFET - Power, SingleN-Channel80 V, 13.4 mW, 41 ANTTFS6H854NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)13.4 mW @ 10 V

 6.3. nttfs6h850n.pdf Size:196K _onsemi

NTTFS6H860NL
NTTFS6H860NL

NTTFS6H850NMOSFET Power, Single,N-Channel80 V, 9.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX80 V 9.5 mW @ 10 V 68 AMAXIMUM RATINGS (TJ = 25C unless otherwise

6.4. nttfs6h880nl.pdf Size:197K _onsemi

NTTFS6H860NL
NTTFS6H860NL

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANTTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant29 mW @ 10 V80 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Datasheet: CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , IRFZ44A , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .

 

 
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