STP6N60FI MOSFET Datasheet: N-Ch, 600V, 3.8A. Full specification with pinout and replacement list

STP6N60FI Specs and Replacement

Type Designator: STP6N60FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: ISOWATT220

STP6N60FI substitution

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STP6N60FI datasheet

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STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V ... See More ⇒

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STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP6N60FI 600 V ... See More ⇒

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STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 4.5 A TO-220FP TAB STU6N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous... See More ⇒

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STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STF6N65M2 3 3 STP6N65M2 650 V 1.35 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB Extremely low gate charge Excellent output capacitance (COSS) profile 3 2 1... See More ⇒