SI4430 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4430
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 103 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 638 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SO8L SOP8
SI4430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4430 Datasheet (PDF)
si4430.pdf
SOP-8 Plastic-Encapsulate MOSFETS SI4430N-Channel Enhancement Mode Power MOSFET SO-8LDDDDescription DThe SI4430 uses advanced trench technology to provide GGSexcellent RDS(ON) and low gate charge . The complementary S SSSSO-8 SPin 1MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Equivalent Cir cuitD
si4430dy.pdf
Si4430DYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.004 (typ)@ VGS = 10 V "2330300.008 @ VGS = 4.5 V "17DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10 secs Steady State UnitDrain-Source Voltage VDS 30VVGa
si4430bdy.pdf
Si4430BDYVishay SiliconixN-Channel 30-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs30 240.006 at VGS = 4.5 V 17 100 % Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5 GTop ViewSOrdering Information: Si4430BDY-T1-E3 (Le
si4430bd.pdf
Si4430BDYVishay SiliconixN-Channel 30-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0045 at VGS = 10 V 20 TrenchFET Power MOSFETs30 240.006 at VGS = 4.5 V 17 100 % Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5 GTop ViewSOrdering Information: Si4430BDY-T1-E3 (Le
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