SI4N60-TN3-T Specs and Replacement
Type Designator: SI4N60-TN3-T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
SI4N60-TN3-T substitution
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SI4N60-TN3-T datasheet
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to ... See More ⇒
csi4n60.pdf
BRI4N60(CSI4N60) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒
swd4n60da swf4n60da swsi4n60da.pdf
SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou... See More ⇒
Detailed specifications: SI4260, SI4430, SI4614, SI4953, SI4N60-TA3-T, SI4N60-TF3-T, SI4N60-TM3-T, SI4N60-TN3-R, AO3400, SI4N60L-TA3-T, SI4N60L-TF3-T, SI4N60L-TM3-T, SI4N60L-TN3-R, SI4N60L-TN3-T, SI4N65, SI4N65F, SI5N60-TA3-T
Keywords - SI4N60-TN3-T MOSFET specs
SI4N60-TN3-T cross reference
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SI4N60-TN3-T substitution
SI4N60-TN3-T replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI4N60-TN3-R | BUK9524-55A
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