SI4N65F
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4N65F
Marking Code: 4N65
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
TO220F
SI4N65F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4N65F
Datasheet (PDF)
8.2. Size:227K cn szxunrui
si4n65.pdf 
N-CHANNEL MOSFETSI4N65650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast s
9.2. Size:644K fairchild semi
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
9.3. Size:235K lzg
csi4n60.pdf
BRI4N60(CSI4N60) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
9.4. Size:851K samwin
swd4n60da swf4n60da swsi4n60da.pdf
SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ3.35)@VGS=10V RDS(ON) : 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou
9.5. Size:916K samwin
swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf
SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T
9.6. Size:352K cn szxunrui
si4n60.pdf
N-CHANNEL MOSFET SI4N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONis a high voltage MOSFET and is designed to have better characteristics,The SI4N60such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This
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