SI5N60-TF3-T Datasheet and Replacement
Type Designator: SI5N60-TF3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
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SI5N60-TF3-T Datasheet (PDF)
si5n60.pdf

N-CHANNEL MOSFETSI5N604 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SI5N60 is a high voltage MOSFET and is designed to have better characteristics ,such as fast switching time, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: VBJ1201K | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS
Keywords - SI5N60-TF3-T MOSFET datasheet
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History: VBJ1201K | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS



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